DocumentCode
2848884
Title
Metal Inserted Poly-Si (MIPS) and FUSI dual metal (TaN and NiSi) CMOS integration
Author
Singanamalla, R. ; van Dal, M.J.H. ; Demand, M. ; Shamiryan, D. ; Beckx, S. ; Jaenen, P. ; Locorotondo, S. ; Yu, H. ; Hooker, J.C. ; Kubicek, S. ; De Meyer, K. ; Biesemans, S. ; Juffermans, C. ; Lander, R.J.P.
Author_Institution
IMEC, Leuven
fYear
2007
fDate
23-25 April 2007
Firstpage
1
Lastpage
2
Abstract
We demonstrate for the first time the CMOS integration combining inserted metal with FUSI using a novel process flow. The proposed flow allows for a flexible gate electrode and dielectric choice for island PMOSFETS, without adding excessive process complexity or additional masks. It is considered as a promising alternative for dual metal integration for 45 nm bulk CMOS technology and beyond.
Keywords
CMOS analogue integrated circuits; MOSFET; nickel compounds; semiconductor device metallisation; tantalum compounds; CMOS integration; FUSI dual metal integration; NiSi; TaN; dielectric choice; flexible gate electrode; island PMOSFET; metal inserted poly-Si MIPS; CMOS process; CMOS technology; Capacitance; Dielectric materials; Electrodes; Etching; Inorganic materials; MOSFETs; Oxidation; Tin;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on
Conference_Location
Hsinchu
ISSN
1524-766X
Print_ISBN
1-4244-0584-X
Electronic_ISBN
1524-766X
Type
conf
DOI
10.1109/VTSA.2007.378906
Filename
4239474
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