BTI Reliability of Dual Metal Gate CMOSFETs with Hf-based High-k Gate Dielectrics

Author

Liao, J.C. ; Fang, Y.K. ; Hou, Y.T. ; Hung, C.L. ; Hsu, P.F. ; Lin, K.C. ; Huang, K.T. ; Lee, T.L. ; Liang, M.S.

Author_Institution

Nat. Cheng Kung Univ., Tainan

fYear

2007

fDate

23-25 April 2007

Firstpage

1

Lastpage

2

Abstract

This paper reports the BTI reliability of dual metal gate CMOSFETs with Hf-based dielectrics including HfO₂ and HfSiON. Severer PBTI degradation was observed on HfO₂ NMOSFETs and two NBTI degradation behaviors were observed on HfO₂ pMOSFET. The strain effect and channel length dependence on BTI were also investigated. Mechanical strain degrades NBTI but has no effect on PBTI. As channel length scaling down, both PBTI and NBTI are mitigated.

Keywords

CMOS integrated circuits; MOSFET; hafnium compounds; high-k dielectric thin films; semiconductor device reliability; semiconductor device testing; thermal stability; BTI reliability; HfO₂; HfSiON; NBTI degradation; PBTI degradation; bias temperature instability characteristics; channel length dependence; dual metal gate CMOSFET; high-k gate dielectrics; mechanical strain; strain effect; CMOSFETs; Capacitive sensors; Degradation; Hafnium oxide; High-K gate dielectrics; MOSFET circuits; Niobium compounds; Tensile stress; Titanium compounds; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on

Conference_Location

Hsinchu

ISSN

1524-766X

Print_ISBN

1-4244-0584-X

Electronic_ISBN

1524-766X

Type

conf

DOI

10.1109/VTSA.2007.378908

Filename

4239476