Title :
BTI Reliability of Dual Metal Gate CMOSFETs with Hf-based High-k Gate Dielectrics
Author :
Liao, J.C. ; Fang, Y.K. ; Hou, Y.T. ; Hung, C.L. ; Hsu, P.F. ; Lin, K.C. ; Huang, K.T. ; Lee, T.L. ; Liang, M.S.
Author_Institution :
Nat. Cheng Kung Univ., Tainan
Abstract :
This paper reports the BTI reliability of dual metal gate CMOSFETs with Hf-based dielectrics including HfO2 and HfSiON. Severer PBTI degradation was observed on HfO2 NMOSFETs and two NBTI degradation behaviors were observed on HfO2 pMOSFET. The strain effect and channel length dependence on BTI were also investigated. Mechanical strain degrades NBTI but has no effect on PBTI. As channel length scaling down, both PBTI and NBTI are mitigated.
Keywords :
CMOS integrated circuits; MOSFET; hafnium compounds; high-k dielectric thin films; semiconductor device reliability; semiconductor device testing; thermal stability; BTI reliability; HfO2; HfSiON; NBTI degradation; PBTI degradation; bias temperature instability characteristics; channel length dependence; dual metal gate CMOSFET; high-k gate dielectrics; mechanical strain; strain effect; CMOSFETs; Capacitive sensors; Degradation; Hafnium oxide; High-K gate dielectrics; MOSFET circuits; Niobium compounds; Tensile stress; Titanium compounds; Voltage;
Conference_Titel :
VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
1-4244-0584-X
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2007.378908
