DocumentCode :
2848939
Title :
Issues associated with p-type band-edge effective work function metal electrodes: Fermi-level pinning and flatband roll-off
Author :
Wen, Huang-Chun ; Choi, Kisik ; Park, C.S. ; Majhi, Prashant ; Harris, H. Rusty ; Niimi, Hiro ; Park, Hong-Bae ; Bersuker, Gennadi ; Lysaght, Patrick ; Kwong, D.L. ; Song, S.C. ; Lee, Byong Hun ; Jammy, Raj
Author_Institution :
Texas Univ., Austin
fYear :
2007
fDate :
23-25 April 2007
Firstpage :
1
Lastpage :
2
Abstract :
Issues associated with the integration of p-type band-edge (5.0~5.2 eV) effective work function (EWF) electrodes are identified and discussed. The Fermi-level (Ef) pinning effect traditionally used to explain the lowering of p-MOS EWF is believed not to be an intrinsic limitation. However, a new described as the "flatband (Vfb,) rolloff effect" is shown to be the dominant factor.
Keywords :
Fermi level; MOS integrated circuits; electrodes; fermi-level pinning; flatband roll-off; p-MOS EWF; p-type band-edge effective work function metal electrodes; Annealing; Conducting materials; Drives; Electrodes; High K dielectric materials; High-K gate dielectrics; Inorganic materials; Instruments; Jamming; Time of arrival estimation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on
Conference_Location :
Hsinchu
ISSN :
1524-766X
Print_ISBN :
1-4244-0584-X
Electronic_ISBN :
1524-766X
Type :
conf
DOI :
10.1109/VTSA.2007.378910
Filename :
4239478
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2848939
بازگشت