Observation of Coulomb blockade in structures created by the method of SECO (step edge cut off)

Author

Litvin, L.V. ; Kolosanov, V.A. ; Cherkov, A.G. ; Tkachenko, V.A. ; Baksheyev, D.G. ; Mogilnicov, K.P. ; Aseev, A.L.

Author_Institution

Inst. of Semicond. Phys., Acad. of Sci., Novosibirsk, Russia

fYear

1998

fDate

1998

Firstpage

47

Lastpage

48

Abstract

For observation of the Coulomb blockade, SECO-structures with self-aligned gates with island size of 170×170×12 nm on Ti/Si₃N₄ were fabricated. On these structures, single-electron current oscillations from gate voltage were observed at a temperature of 4.2 K. The magnitude of the Coulomb gap was 6 mV

Keywords

Coulomb blockade; current fluctuations; electron beam lithography; metal-insulator boundaries; silicon compounds; single electron transistors; titanium; 12 nm; 170 nm; 4.2 K; Coulomb blockade; Coulomb gap; SECO-structures; Ti-Si₃N₄; Ti/Si₃N₄; island size; self-aligned gates; single electron transistors; single-electron current oscillations; step edge cut off structures; two-layer electron beam lithography; Electrodes; Electron beams; Etching; Insulation; Lithography; Metal-insulator structures; Physics; Plasma temperature; Single electron devices; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Instrument Engineering Proceedings, 1998. APEIE-98. Volume 1. 4th International Conference on Actual Problems of

Conference_Location

Novosibirsk

Print_ISBN

0-7803-4938-5

Type

conf

DOI

10.1109/APEIE.1998.768905

Filename

768905