Title :
Observation of Coulomb blockade in structures created by the method of SECO (step edge cut off)
Author :
Litvin, L.V. ; Kolosanov, V.A. ; Cherkov, A.G. ; Tkachenko, V.A. ; Baksheyev, D.G. ; Mogilnicov, K.P. ; Aseev, A.L.
Author_Institution :
Inst. of Semicond. Phys., Acad. of Sci., Novosibirsk, Russia
Abstract :
For observation of the Coulomb blockade, SECO-structures with self-aligned gates with island size of 170×170×12 nm on Ti/Si3N4 were fabricated. On these structures, single-electron current oscillations from gate voltage were observed at a temperature of 4.2 K. The magnitude of the Coulomb gap was 6 mV
Keywords :
Coulomb blockade; current fluctuations; electron beam lithography; metal-insulator boundaries; silicon compounds; single electron transistors; titanium; 12 nm; 170 nm; 4.2 K; Coulomb blockade; Coulomb gap; SECO-structures; Ti-Si3N4; Ti/Si3N4; island size; self-aligned gates; single electron transistors; single-electron current oscillations; step edge cut off structures; two-layer electron beam lithography; Electrodes; Electron beams; Etching; Insulation; Lithography; Metal-insulator structures; Physics; Plasma temperature; Single electron devices; Voltage;
Conference_Titel :
Electronic Instrument Engineering Proceedings, 1998. APEIE-98. Volume 1. 4th International Conference on Actual Problems of
Conference_Location :
Novosibirsk
Print_ISBN :
0-7803-4938-5
DOI :
10.1109/APEIE.1998.768905
