Title :
A study of interface states of directly bonded silicon-on-insulator (SOI) structures
Author :
Buldygin, S.A. ; Bulycheva, T.V. ; Golod, S.V. ; Drofa, A.T. ; Kamaev, G.N. ; Skok, E.M.
Author_Institution :
Inst. of Semicond. Phys., Acad. of Sci., Novosibirsk, Russia
Abstract :
In this paper, experimental data on the temperature-dependent transient photoconductivity obtained on bonded SOI structures are presented. It is shown that, during the bonding process at the interface of the sample, electrically active states appear. The values of activation energies and capture cross-sections of charge carriers at the interface are similar to those at the interface of silicon and thermal oxide
Keywords :
interface states; photoconductivity; silicon-on-insulator; transient analysis; Si-SiO2; activation energies; charge carrier capture cross-sections; directly bonded SOI structures; electrically active states; interface states; temperature-dependent transient photoconductivity; trap level energy parameters; Bonding processes; Charge carriers; Conductivity; Energy measurement; Interface states; Microwave measurements; Microwave theory and techniques; Photoconductivity; Silicon on insulator technology; Wafer bonding;
Conference_Titel :
Electronic Instrument Engineering Proceedings, 1998. APEIE-98. Volume 1. 4th International Conference on Actual Problems of
Conference_Location :
Novosibirsk
Print_ISBN :
0-7803-4938-5
DOI :
10.1109/APEIE.1998.768906
