SiGe Channel CMOSFETs Fabricated on (110) Surfaces with TaC/HfO2 Gate Stacks

Author

Liu, P.W. ; Lin, Y.H. ; Chiang, W.T. ; Tsai, C.H. ; Cheng, L.W. ; Tsai, C.T. ; Ma, G.H.

Author_Institution

United Microelectron. Corp., Hsinchu

fYear

2007

fDate

23-25 April 2007

Firstpage

1

Lastpage

2

Abstract

The promising potential of SiGe channel for next generation CMOSFETs applications has been demonstrated on (110) surfaces. SiGe channel CMOSFETs with TaC/FffO₂ gate stack were fabricated on (110) surfaces for the first time. By introducing SiGe for channel material, the mobility of n/p-MOSFETs with TaC/HfO₂ gate stacks can be greatly improved compared to Si channel devices with the same metal-gate/high-K gate stacks. The (110) SiGe channel n/p-MOSFETs with TaC/FffO₂ gate stacks show 1.8x and 2.4x mobility enhancements over (110) Si devices with TaC/HfO₂. The 23% propagation time delay improvement of ring oscillators fabricated with (110) SiGe channel CMOSFETs and poly/oxynitride gate stacks also proves the feasibility of (110) SiGe channel.

Keywords

CMOS integrated circuits; Ge-Si alloys; carrier mobility; hafnium compounds; oscillators; tantalum compounds; CMOSFET; SiGe; TaC-HfO₂; gate stacks; mobility enhancements; ring oscillators; CMOSFETs; Delay effects; Germanium silicon alloys; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Inorganic materials; MOSFET circuits; Ring oscillators; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on

Conference_Location

Hsinchu

ISSN

1524-766X

Print_ISBN

1-4244-0584-X

Electronic_ISBN

1524-766X

Type

conf

DOI

10.1109/VTSA.2007.378914

Filename

4239482