Title :
Reliability of ALD Hf-based High K Gate Stacks with Optimized Interfacial Layer and Pocket Implant Engineering
Author :
Mao, A.Y. ; Lin, W.M. ; Yang, C.W. ; Hsieh, Y.S. ; Cheng, L.W. ; Lee, G.D. ; Tsai, C.T. ; Chung, S.S. ; Ma, G.H.
Author_Institution :
United Microelectron. Corp., Hsinchu
Abstract :
Reliability of ALD (atomic layer deposition) HfSiON high K gate stacks is greatly enhanced with a properly engineered IL (interfacial layer) between the gate dielectrics and the Si substrate. We report that the HfSiON, while deposited on an optimized plasma-based IL containing [N], exhibits strong resistance to the bombardment from heavy pocket implant species, achieving significantly reduced leakage and excellent reliability characteristics, compared to the HfSiON without an optimized IL and to the silicon oxynitride control wafers.
Keywords :
MIS devices; atomic layer deposition; dielectric materials; hafnium compounds; high-k dielectric thin films; leakage currents; semiconductor device manufacture; semiconductor device reliability; silicon compounds; HfSiON; HfSiON deposition; MOS device; atomic layer deposition; high K gate dielectric stack reliability; leakage current reduction; optimized plasma-based interfacial layer; pocket implant engineering; Degradation; Dielectric substrates; High K dielectric materials; High-K gate dielectrics; Implants; Plasma devices; Plasma properties; Plasma temperature; Reliability engineering; Stress control;
Conference_Titel :
VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
1-4244-0584-X
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2007.378915
