Title : 
Managing Bias-Temperature Instability for Product Reliability
         
        
            Author : 
Lee, Yung-Huei ; McMahon, William ; Mielke, Neal ; Lu, Yin-Lung Ryan ; Walstra, Steve
         
        
            Author_Institution : 
Intel Corp., Santa Clara
         
        
        
        
        
        
            Abstract : 
A NBTI model has been generated which takes into consideration AC recovery. This model can be used to improve the connection between the DC stress measurements of a discrete device and AC product usage in a real device. The model can be incorporated into circuit aging simulations to check the NBTI degradation for a simple circuit. For complicated circuitry such as CPU, NBTI degradation should be managed through process optimization, circuit timing design, and product test guardband to ensure that products meet customer spec and lifetime usage.
         
        
            Keywords : 
integrated circuit design; integrated circuit modelling; integrated circuit reliability; microprocessor chips; semiconductor device reliability; thermal stability; AC recovery; CPU; DC stress measurements; NBTI degradation; PMOST degradation; circuit aging simulation; circuit timing design; negative bias-temperature instability; process optimization; product reliability; product test guardband; AC generators; Aging; Circuit simulation; Circuit testing; Degradation; Design optimization; Niobium compounds; Stress measurement; Timing; Titanium compounds;
         
        
        
        
            Conference_Titel : 
VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on
         
        
            Conference_Location : 
Hsinchu
         
        
        
            Print_ISBN : 
1-4244-0584-X
         
        
            Electronic_ISBN : 
1524-766X
         
        
        
            DOI : 
10.1109/VTSA.2007.378916