• DocumentCode
    2849027
  • Title

    Managing Bias-Temperature Instability for Product Reliability

  • Author

    Lee, Yung-Huei ; McMahon, William ; Mielke, Neal ; Lu, Yin-Lung Ryan ; Walstra, Steve

  • Author_Institution
    Intel Corp., Santa Clara
  • fYear
    2007
  • fDate
    23-25 April 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    A NBTI model has been generated which takes into consideration AC recovery. This model can be used to improve the connection between the DC stress measurements of a discrete device and AC product usage in a real device. The model can be incorporated into circuit aging simulations to check the NBTI degradation for a simple circuit. For complicated circuitry such as CPU, NBTI degradation should be managed through process optimization, circuit timing design, and product test guardband to ensure that products meet customer spec and lifetime usage.
  • Keywords
    integrated circuit design; integrated circuit modelling; integrated circuit reliability; microprocessor chips; semiconductor device reliability; thermal stability; AC recovery; CPU; DC stress measurements; NBTI degradation; PMOST degradation; circuit aging simulation; circuit timing design; negative bias-temperature instability; process optimization; product reliability; product test guardband; AC generators; Aging; Circuit simulation; Circuit testing; Degradation; Design optimization; Niobium compounds; Stress measurement; Timing; Titanium compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on
  • Conference_Location
    Hsinchu
  • ISSN
    1524-766X
  • Print_ISBN
    1-4244-0584-X
  • Electronic_ISBN
    1524-766X
  • Type

    conf

  • DOI
    10.1109/VTSA.2007.378916
  • Filename
    4239484