• DocumentCode
    2849107
  • Title

    Methods of control of technological process of an electronic irradiation of power semiconductor devices (PSD)

  • Author

    Geifman, E.M. ; Kanev, D.D. ; Fedotov, A.N. ; Chibirkin, V.V.

  • Author_Institution
    Open Joint-Stock Co. Electrovipryamitel, Mordovia, Russia
  • fYear
    1998
  • fDate
    1998
  • Firstpage
    71
  • Lastpage
    74
  • Abstract
    The technological process of electronic irradiation is applied in batch production of power semiconductor devices (PSDs) for improving their dynamic characteristics. As the capacities of converters have been growing and because of the necessity to use PSD at parallel and series connections, PSDs should have values of on-state voltage (Utm) and reverse recovery charge (Qrr) that differ from each other by the preset value but no more. The authors develop methods of regulation of the values of Qrr and Utm of semiconductor devices with preset precision
  • Keywords
    electron beam effects; power semiconductor devices; process control; voltage control; batch production; dynamic characteristics; electronic irradiation; on-state voltage; power semiconductor devices; reverse recovery charge; technological process control; Area measurement; Equations; Power semiconductor devices; Process control; Production; Semiconductor devices; Temperature dependence; Temperature measurement; Turing machines; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Instrument Engineering Proceedings, 1998. APEIE-98. Volume 1. 4th International Conference on Actual Problems of
  • Conference_Location
    Novosibirsk
  • Print_ISBN
    0-7803-4938-5
  • Type

    conf

  • DOI
    10.1109/APEIE.1998.768912
  • Filename
    768912