DocumentCode
2849107
Title
Methods of control of technological process of an electronic irradiation of power semiconductor devices (PSD)
Author
Geifman, E.M. ; Kanev, D.D. ; Fedotov, A.N. ; Chibirkin, V.V.
Author_Institution
Open Joint-Stock Co. Electrovipryamitel, Mordovia, Russia
fYear
1998
fDate
1998
Firstpage
71
Lastpage
74
Abstract
The technological process of electronic irradiation is applied in batch production of power semiconductor devices (PSDs) for improving their dynamic characteristics. As the capacities of converters have been growing and because of the necessity to use PSD at parallel and series connections, PSDs should have values of on-state voltage (Utm) and reverse recovery charge (Qrr) that differ from each other by the preset value but no more. The authors develop methods of regulation of the values of Qrr and Utm of semiconductor devices with preset precision
Keywords
electron beam effects; power semiconductor devices; process control; voltage control; batch production; dynamic characteristics; electronic irradiation; on-state voltage; power semiconductor devices; reverse recovery charge; technological process control; Area measurement; Equations; Power semiconductor devices; Process control; Production; Semiconductor devices; Temperature dependence; Temperature measurement; Turing machines; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Instrument Engineering Proceedings, 1998. APEIE-98. Volume 1. 4th International Conference on Actual Problems of
Conference_Location
Novosibirsk
Print_ISBN
0-7803-4938-5
Type
conf
DOI
10.1109/APEIE.1998.768912
Filename
768912
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