Title :
The effect of bandgap engineering on IC-VBE fly-back characteristic of power SiGe heterojunction bipolar transistor
Author :
Liang, Chen ; Wan-rong, Zhang ; Dong-yue, Jin ; Chun-bao, Ding ; Yu-jie, Zhang ; Zhi-yi, Lu
Author_Institution :
Coll. of Electron. Inf. & Control Eng., Beijing Univ. of Technol., Beijing, China
Abstract :
The effect of bandgap engineering on IC-VBE flyback characteristic of power SiGe heterojunction bipolar transistor is studied through theoretical analysis, computer simulations, and experimental measurements. It is found that because of the existence of Ge composition, SiGe Heterojunction Bipolar Transistors have better thermal stability compared with homojunction bipolar transistors under the same operating condition which will be beneficial to decrease the emitter ballast resistance of HBT and improve the performance of transistor. And the greater Ge composition is, the more stable the HBT is.
Keywords :
Ge-Si alloys; energy gap; heterojunction bipolar transistors; power bipolar transistors; semiconductor device models; semiconductor materials; thermal stability; IC-VBE fly-back characteristic; SiGe; bandgap engineering; emitter ballast resistance; homojunction bipolar transistors; power heterojunction bipolar transistor; thermal stability; Heterojunction bipolar transistors; Microwave devices; Microwave integrated circuits; Silicon germanium; Temperature dependence; Thermal stability; Bandgap Engineering; SiGe HBTs; fly-back characteristic;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of
Conference_Location :
Tianjin
Print_ISBN :
978-1-4577-1998-1
Electronic_ISBN :
Pending
DOI :
10.1109/EDSSC.2011.6117589
