Title :
Positive resists for electron-beam and X-ray lithography
Author :
Bulgakova, S.A. ; Mazanova, L.M. ; Semchikov, Yu.D. ; Lopatin, A.Y. ; Luchin, V.I. ; Salashchenko, N.N.
Author_Institution :
Res. Inst. of Chem., Nizhny Novgorod State Univ., Russia
Abstract :
For the first time the method of chemical modification of polymethylmethacrylate (PMMA) as a positive radiation resist which allows 2-3 fold increase of PMMA sensitivity to radiation without the lost of its high resolution has been proposed. Organohydridedisilanes (DS) have been used as modificators of the polymer. These modificators include Si-Si bonds weaker than C-C bonds which make a contribution to the increase of efficiency of the polymer chain scissions upon irradiation. Lines of 0.14 μm width were produced in the 0.41 μm thick PMMA films by electron-beam lithography. Based on the PMMA copolymers modified by DS two resists of 5-8 times higher sensitivity than PMMA and similar contrast have been developed
Keywords :
X-ray lithography; electron resists; photoresists; polymer blends; polymer films; polymerisation; 0.14 mum; 0.4 mum; PMMA; PMMA copolymers; PMMA films; X-ray lithography; chemical modification; contrast; electron-beam lithography; linewidth; organohydridedisilanes; polymer chain scissions; polymethylmethacrylate; positive radiation resist; radiation sensitivity; Chemical technology; Chemistry; Electron beams; Microelectronics; Microstructure; Polymer films; Resists; Silicon compounds; Testing; X-ray lithography;
Conference_Titel :
Electronic Instrument Engineering Proceedings, 1998. APEIE-98. Volume 1. 4th International Conference on Actual Problems of
Conference_Location :
Novosibirsk
Print_ISBN :
0-7803-4938-5
DOI :
10.1109/APEIE.1998.768915
