Unipolar CMOS inverter based on punch-through effect with two embedded oxide structure

This paper presents a novel NMOS structure called two-embedded oxide (2EO) to replace the conventional PMOS transistor in a CMOS inverter. According to TCAD simulations, the 2EO is used to control the punch-through current to achieve the desired characteristics for a CMOS inverter. More importantly, compared with the conventional CMOS layout, due to the presence of two NMOS transistors to share the output contact, a reduction in mask-layout area (improved 59%) is observed. Compared with the EO, our proposed 2EO can reduce the static power consumption by 33%, for achieving a requirement of reduced static power consumption in a non-conventional CMOS.