Title :
A 2-bit/cell, Maskless, Self-Aligned Resistance Memory with High Thermal Stability
Author :
Ho, ChiaHua ; Lee, Ming-Daou ; Pan, Chen-Ling ; Lai, Erh-Kun ; Yao, Yeong-Der ; Hsieh, Kuang-Yeu ; Liu, Rich ; Lu, Chih-Yuan
Author_Institution :
Maxcronix Int. Co. Ltd., Hsinchu
Abstract :
We report the first demonstration of a multilevel cell (MLC) resistance device using a self-aligned WOx film prepared by plasma oxidation. The 2-bit/cell operation is achieved by applying a series of 1.5 V programming pulses. The device shows high thermal stability and good data retention. The resistance change can be attributed to variable-range hopping and Ohmic transport mechanisms. This device has the potential for future low-voltage, 3-dimensional nonvolatile memory with multiple bits per layer. In addition, no additional mask is needed to form the self-aligned device.
Keywords :
electric resistance; hopping conduction; oxidation; plasma materials processing; random-access storage; thermal stability; tungsten compounds; 3-dimentional nonvolatile memory; Ohmic transport mechanism; WO; data retention; future low-voltage memory; maskless memory; multilevel cell resistance device; plasma oxidation; programming pulse series; self-aligned resistance memory; thermal stability; tungsten oxide film; variable-range hopping mechanism; voltage 1.5 V; word length 2 bit; Electrodes; Materials science and technology; Metal-insulator structures; Oxidation; Physics; Tellurium; Thermal resistance; Thermal stability; Tin; Voltage;
Conference_Titel :
VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
1-4244-0584-X
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2007.378937
