A qualitative comparison study of analog performance of junction and junctionless poly-Si TFTs

Author

Wang, Shih-Wei ; Lin, Jyi-Tsong ; Eng, Yi-Chuen ; Chang, Yu-Che ; Lin, Chia-Hsien ; Chen, Hsuan-Hsu ; Lin, Po-Hsieh ; Tai, Chih-Hsuan ; Pai, Ching-Yao

Author_Institution

Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan

fYear

2011

fDate

17-18 Nov. 2011

Firstpage

1

Lastpage

2

Abstract

In this work, a qualitative comparison study of analog performance of junction and junctionless poly-Si TFTs is carefully investigated. According to numerical simulations, we find out that both g_m and g_D of junction poly-Si TFT are higher than the junctionless poly-Si TFT at a fixed I_DS. Based on the same S/D doping concentration the junctionless poly-Si TFT can have a better short-channel behavior than its counterpart. Thus, it can be proved that a junctionless poly-Si TFT is a good option for AMLCD and AMOLED Applications.

Keywords

elemental semiconductors; silicon; thin film transistors; AMLCD application; AMOLED application; S-D doping concentration; Si; analog performance; junction polysilicon TFT; junctionless polysilicon TFT; numerical simulations; qualitative comparison study; short-channel behavior; Doping; Fabrication; Junctions; Logic gates; Performance evaluation; Thin film transistors; Analog operation; junctionless (JL) transistor; thin-film transistor (TFT);

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of

Conference_Location

Tianjin

ISSN

Pending

Print_ISBN

978-1-4577-1998-1

Electronic_ISBN

Pending

Type

conf

DOI

10.1109/EDSSC.2011.6117609

Filename

6117609