Title :
A novel circuit element for MOS integrated circuits
Author_Institution :
Integrated Photomatrix, Ltd., Dorset, England
Abstract :
The storage of charge on reverse-biased PN diodes in enhancement mode, P-channel MOS ICs is a particularly useful circuit feature in optoelectronic photo-sensor applications. This paper will describe a simple circuit element, analogous to the diode pump in operation, consisting of a diffused diode and MOS gate region only.
Keywords :
Charge pumps; Light emitting diodes; Lighting; MOS integrated circuits; Neck; Optoelectronic and photonic sensors; Oscillators; Pulse circuits; Switches; Threshold voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1970 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1970.1154819
