Title :
Trapping effects in MOS photosensing arrays
Author :
Declercq, Michel ; Jespers, P.
Author_Institution :
Catholic University of Louvain, Heverlee, Belgium
Abstract :
Switching photsensing diodes of an array by MOS transistors may cause severe losses of charges into the substrate, due to trapping in the oxide. The effect can be minimized by carefully selecting driving points of the MOST.
Keywords :
Diodes; Inspection; Leakage current; MOSFETs; Photodiodes; Substrates; Switches; Temperature sensors; Tunneling; Voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1970 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1970.1154822
