DocumentCode :
2849510
Title :
Passive Mode-Locking in AlGaInAs 1.55-µm strained quantum well lasers: Modeling and experiment
Author :
Javaloyes, J. ; Stolarz, P. ; Hou, L. ; Sorel, M. ; Bryce, A.C. ; Balle, S.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Glasgow, Glasgow, UK
fYear :
2010
fDate :
19-23 Sept. 2010
Firstpage :
1
Lastpage :
3
Abstract :
We study the Mode-Locking dynamics of 40-GHz semiconductor Fabry-Pérot lasers with intracavity saturable absorber by using a Traveling-Wave-Model and a time-domain response of the semiconductor material. We analyze the influence of key parameters and compare our predictions with experimental results.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser cavity resonators; laser mode locking; optical saturable absorption; quantum well lasers; time-domain analysis; AlGaInAs; frequency 40 GHz; intracavity saturable absorber; passive mode-locking; semiconductor Fabry-Perot lasers; semiconductor material; strained quantum well lasers; time-domain response; traveling-wave-model; wavelength 1.55 mum; Bifurcation; Cavity resonators; Laser mode locking; Laser theory; Optical polarization; Semiconductor lasers; Waveguide lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optical Communication (ECOC), 2010 36th European Conference and Exhibition on
Conference_Location :
Torino
Print_ISBN :
978-1-4244-8536-9
Electronic_ISBN :
978-1-4244-8534-5
Type :
conf
DOI :
10.1109/ECOC.2010.5621528
Filename :
5621528
Link To Document :
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