• DocumentCode
    2849510
  • Title

    Passive Mode-Locking in AlGaInAs 1.55-µm strained quantum well lasers: Modeling and experiment

  • Author

    Javaloyes, J. ; Stolarz, P. ; Hou, L. ; Sorel, M. ; Bryce, A.C. ; Balle, S.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Univ. of Glasgow, Glasgow, UK
  • fYear
    2010
  • fDate
    19-23 Sept. 2010
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    We study the Mode-Locking dynamics of 40-GHz semiconductor Fabry-Pérot lasers with intracavity saturable absorber by using a Traveling-Wave-Model and a time-domain response of the semiconductor material. We analyze the influence of key parameters and compare our predictions with experimental results.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser cavity resonators; laser mode locking; optical saturable absorption; quantum well lasers; time-domain analysis; AlGaInAs; frequency 40 GHz; intracavity saturable absorber; passive mode-locking; semiconductor Fabry-Perot lasers; semiconductor material; strained quantum well lasers; time-domain response; traveling-wave-model; wavelength 1.55 mum; Bifurcation; Cavity resonators; Laser mode locking; Laser theory; Optical polarization; Semiconductor lasers; Waveguide lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optical Communication (ECOC), 2010 36th European Conference and Exhibition on
  • Conference_Location
    Torino
  • Print_ISBN
    978-1-4244-8536-9
  • Electronic_ISBN
    978-1-4244-8534-5
  • Type

    conf

  • DOI
    10.1109/ECOC.2010.5621528
  • Filename
    5621528