DocumentCode :
2849525
Title :
A monolithic numeric display device
Author :
Barnett, Allen ; Heumann, F.
Author_Institution :
General Electric Research and Development Center, Schnectady, NY, USA
Volume :
XIII
fYear :
1970
fDate :
18-20 Feb. 1970
Firstpage :
24
Lastpage :
25
Abstract :
This paper will describe a monolithic numeric display device utilizing GaAs with an infrared-to-visible converting phosphor. A seven-bar numeric pattern has been etched into a silicon-doped GaAs PN junction. Total display-device dimension is 
.
.Keywords :
Brightness; Displays; Electromagnetic wave absorption; Etching; Gallium arsenide; Gold; Light emitting diodes; Optical arrays; Phosphors; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1970 IEEE International
Conference_Location :
Philadelphia, PA, USA
Type :
conf
DOI :
10.1109/ISSCC.1970.1154828
Filename :
1154828
Link To Document :
