Title :
A novel 1T2UMTJ toggle MRAM with high read/write bandwidth interface
Author :
Wang, M.C. ; Tsai, J.R. ; Hung, C.C. ; Chen, Y.S. ; Chang, C.P. ; Lin, C.S. ; Wang, C.C. ; Su, K.L. ; Lee, Y.J. ; Wang, D.Y. ; Shen, K.H. ; Tsai, M.J. ; Kao, M.J.
Author_Institution :
ITRI, Hsinchu
Abstract :
A novel one-transistor-and-two-uneven-magnetic tunneling junctions (1T2UMTJ) cell with toggle switching mode is proposed to increase the packing density and to secure the writing selectivity. Besides, a four-state sense amplifier is proposed to reduce the read access time to less than 25 ns for two accessing data in one cycle. With adequate I/O stages, the 1T2UMTJ toggle MRAM architecture has a double word length or alternatively has a high read/write bandwidth. The two-bit data can be read from or written into a selected memory cell of 1T2UMTJ toggle MRAM within one clock cycle, therefore, demonstrating the promising property of high bandwidth processing capability.
Keywords :
magnetic storage; magnetic tunnelling; random-access storage; 1T2UMTJ toggle MRAM; clock cycle; four-state sense amplifier; high bandwidth processing capability; high read-write bandwidth interface; one-transistor-and-two-uneven-magnetic tunneling junction cell; toggle switching mode; Bandwidth; Clocks; Laboratories; Magnetic separation; Magnetic tunneling; Random access memory; Read-write memory; Scalability; Timing; Writing;
Conference_Titel :
VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
1-4244-0584-X
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2007.378949
