Title :
Electron Mobility Enhancement in STRAINED-Germanium NMOSFETs and Impact of Strain Engineering in Ballistic Regime
Author :
Yang, Y.-J. ; Chang, S.T. ; Liu, C.W.
Author_Institution :
Nat. Taiwan Univ., Taipei
Abstract :
The optimal combinations of strain and channel on different substrate orientations for Ge NMOSFETs are reported. Applying biaxial tensile stress on (111) wafer with [-110] channel direction can reach highest mobility value (4.1x) and largest ballistic saturation current (2.6x). For both tensile and compressive strain, the mobility and Jsat enhancement can be found for all substrate orientations if strain condition and channel direction are optimized.
Keywords :
MOSFET; electron mobility; elemental semiconductors; germanium; Ge; biaxial tensile stress; electron mobility enhancement; strain engineering; strained-Ge NMOSFET; Acoustic scattering; Capacitive sensors; Compressive stress; Effective mass; Electron mobility; MOSFETs; Optical scattering; Quantization; Tensile strain; Tensile stress;
Conference_Titel :
VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
1-4244-0584-X
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2007.378950
