Title :
Enhanced Carrier Transport in Strained Bulk N-MOSFETs with Silicon-Carbon Source/Drain Stressors
Author :
Ang, Kah-Wee ; Chui, King-Jien ; Tung, Chih-Hang ; Samudra, Ganesh ; Balasubramanian, N. ; Yeo, Yee-Chia
Author_Institution :
Nat. Univ. of Singapore, Singapore
Abstract :
We report the demonstration of strained n-channel transistor with silicon-carbon (Si1-yCy) source/drain (S/D) stressors for enhanced drive current Ion performance. At a fixed DIBL of 0.15 V/V, n-FETs with (Si1-yCy) S/D demonstrate a significant Ion improvement of 30% over the unstrained control n-FETs. This improvement is attributed to the carrier mobility gain as a result of the lateral tensile strain and vertical compressive strain in the transistor channel.
Keywords :
MOSFET; carbon; silicon; stress effects; bulk N-MOSFET; carrier mobility gain; enhanced carrier transport; lateral tensile strain; n-FET; n-channel transistor; silicon-carbon source/drain stressors; transistor channel; Capacitive sensors; Electron mobility; Epitaxial growth; Etching; Fabrication; Lattices; MOSFET circuits; Strain control; Tensile strain; Threshold voltage;
Conference_Titel :
VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
1-4244-0584-X
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2007.378954
