Implementation of Robust Nickel Alloy Salicide Process for High-Performance 65nm SOI CMOS Manufacturing

Author

Strane, Jay ; Brown, David ; Lavoie, Christian ; Suenaga, Jun ; Haran, Bala ; Press, Patrick ; Besser, Paul ; Flaitz, Philip ; Gribelyuk, Michael ; Kammler, Thorsten ; Peidous, Igor ; Chen, Huajie ; Waidmann, Stephan ; Frye, Asa ; DeHaven, Patrick ; Domen

Author_Institution

IBM, Hopewell Junction

fYear

2007

fDate

23-25 April 2007

Firstpage

1

Lastpage

2

Abstract

Addition of Pt to Ni silicide produces a robust [Ni_xPt_(1-x)]Si, which shows an improved morphological stability, an important reduction in encroachment defect density, a reduced tendency to form NiSi₂ and significant variations in monosilicide texture without degrading the device performance or the yield of high-performance 65 nm SOI technologies.

Keywords

CMOS integrated circuits; integrated circuit technology; nickel compounds; silicon-on-insulator; NiPtSi; encroachment defect density; high-performance SOI CMOS manufacturing process; monosilicide texture; nickel silicide film; robust nickel alloy salicide process; size 65 nm; CMOS process; CMOS technology; Degradation; Germanium silicon alloys; Manufacturing processes; Nickel alloys; Robust stability; Robustness; Silicides; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on

Conference_Location

Hsinchu

ISSN

1524-766X

Print_ISBN

1-4244-0584-X

Electronic_ISBN

1524-766X

Type

conf

DOI

10.1109/VTSA.2007.378955

Filename

4239523