Author :
Strane, Jay ; Brown, David ; Lavoie, Christian ; Suenaga, Jun ; Haran, Bala ; Press, Patrick ; Besser, Paul ; Flaitz, Philip ; Gribelyuk, Michael ; Kammler, Thorsten ; Peidous, Igor ; Chen, Huajie ; Waidmann, Stephan ; Frye, Asa ; DeHaven, Patrick ; Domen
Abstract :
Addition of Pt to Ni silicide produces a robust [NixPt(1-x)]Si, which shows an improved morphological stability, an important reduction in encroachment defect density, a reduced tendency to form NiSi2 and significant variations in monosilicide texture without degrading the device performance or the yield of high-performance 65 nm SOI technologies.
Keywords :
CMOS integrated circuits; integrated circuit technology; nickel compounds; silicon-on-insulator; NiPtSi; encroachment defect density; high-performance SOI CMOS manufacturing process; monosilicide texture; nickel silicide film; robust nickel alloy salicide process; size 65 nm; CMOS process; CMOS technology; Degradation; Germanium silicon alloys; Manufacturing processes; Nickel alloys; Robust stability; Robustness; Silicides; Silicon germanium;
