DocumentCode
2849640
Title
Channel formation in an IGFET and its equivalent circuit for CAD
Author
Goser, K.
Author_Institution
Siemens AG, Munich, Germany
Volume
XIII
fYear
1970
fDate
18-20 Feb. 1970
Firstpage
98
Lastpage
99
Abstract
An equivalent circuit for IGFETs displaying intrinsic cutoff frequencies can be derived from a physical model to describe the formation and disappearance of the channel. Circuit may be useful in analysis of microwave circuits with IGFETs and in the simulation of ICs where transistors with long channels or substrates with high doping levels are used.
Keywords
Circuit simulation; Cutoff frequency; Electrons; Equations; Equivalent circuits; Insulation; MOSFETs; Parasitic capacitance; Switching circuits; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1970 IEEE International
Conference_Location
Philadelphia, PA, USA
Type
conf
DOI
10.1109/ISSCC.1970.1154836
Filename
1154836
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