• DocumentCode
    2849640
  • Title

    Channel formation in an IGFET and its equivalent circuit for CAD

  • Author

    Goser, K.

  • Author_Institution
    Siemens AG, Munich, Germany
  • Volume
    XIII
  • fYear
    1970
  • fDate
    18-20 Feb. 1970
  • Firstpage
    98
  • Lastpage
    99
  • Abstract
    An equivalent circuit for IGFETs displaying intrinsic cutoff frequencies can be derived from a physical model to describe the formation and disappearance of the channel. Circuit may be useful in analysis of microwave circuits with IGFETs and in the simulation of ICs where transistors with long channels or substrates with high doping levels are used.
  • Keywords
    Circuit simulation; Cutoff frequency; Electrons; Equations; Equivalent circuits; Insulation; MOSFETs; Parasitic capacitance; Switching circuits; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1970 IEEE International
  • Conference_Location
    Philadelphia, PA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1970.1154836
  • Filename
    1154836