Title :
UV-A selective photo-responsivity in a GaN MSM photodetector using ITO schottky electrodes
Author :
Lee, Chang-Ju ; Koo, Gyo-Hun ; Kim, Dong-Seok ; Yun, Jun-Yeon ; Lee, Jung-Hee ; Hahm, Sung-Ho
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Kyungpook Nat. Univ., Daegu, South Korea
Abstract :
We examined the AlGaN buffer layer dependent photo-response characteristics of the metal-semiconductor-metal (MSM) UV photodetectors (PDs). In the AlGaN buffer layer PD sample, the peak photo-current was of 4.5 μA at 5 V for 365 nm and dark current level ws 4 pA at 1 V. The UV/visible rejection ratio of AlGaN buffer sample was higher than 104 and HT-GaN/LT-AlN sample was 102 at 1 V, respectively. We observed a UV-A selective (or band-pass-like) response behavior near the 360~370 nm range.
Keywords :
III-V semiconductors; Schottky barriers; aluminium compounds; electrodes; gallium compounds; indium compounds; metal-semiconductor-metal structures; photochromism; photoconductivity; photodetectors; sensitivity; wide band gap semiconductors; AlGaN; GaN; ITO; ITO Schottky electrodes; MSM photodetector; UV-A selective photoresponsivity; buffer layer dependent photoresponse characteristics; current 4 pA; current 4.5 muA; metal-semiconductor-metal UV photodetector; photocurrent; voltage 1 V; voltage 5 V; wavelength 360 nm to 370 nm; Aluminum gallium nitride; Buffer layers; Dark current; Gallium nitride; Photodetectors; Silicon; Substrates; AlGaN buffer layer; GaN; UV photodetector; UV-A selective;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of
Conference_Location :
Tianjin
Print_ISBN :
978-1-4577-1998-1
Electronic_ISBN :
Pending
DOI :
10.1109/EDSSC.2011.6117620
