DocumentCode
2849651
Title
EIDAP: A new broadband high-power UHF and microwave power transistor structure
Author
Goordman, R. ; Petersen, Ian ; Boll, H. ; Bertram, W.
Author_Institution
Bell Telephone Labs., Inc., Murray Hill, NJ, USA
Volume
XIII
fYear
1970
fDate
18-20 Feb. 1970
Firstpage
58
Lastpage
59
Abstract
This paper will describe a composite power transistor, using a new technique for reducing lead inductance, that is capable of 17-W saturated and 11-W linear output, dc-500 MHz, with a gain-bandwidth product of 2.5 GHz.
Keywords
Broadband amplifiers; Coupling circuits; Encapsulation; Feedback; Frequency; Impedance; Inductance; Parasitic capacitance; Power transistors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1970 IEEE International
Conference_Location
Philadelphia, PA, USA
Type
conf
DOI
10.1109/ISSCC.1970.1154837
Filename
1154837
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