DocumentCode :
2849656
Title :
Design considerations for a high-speed bipolar read-only memory
Author :
Bergh, A. ; Barrett, John ; Price, Jack
Author_Institution :
Hewlett-Packard Laboratories, Palo Alto, CA, USA
Volume :
XIII
fYear :
1970
fDate :
18-20 Feb. 1970
Firstpage :
66
Lastpage :
67
Abstract :
A monolithic, fully-decoded 1024-bit read-only memory, with less than 50-ns access time and 350-mW power dissipation, will be discussed. The ROM can be bit-organized with a coincident select structure to minimize pin count and address decoders.
Keywords :
Circuit synthesis; Decoding; Electronics packaging; Integrated circuit packaging; Inverters; Laboratories; Logic design; Power dissipation; Propagation delay; Read only memory;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1970 IEEE International
Conference_Location :
Philadelphia, PA, USA
Type :
conf
DOI :
10.1109/ISSCC.1970.1154838
Filename :
1154838
Link To Document :
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