Amorphization and Templated Recrystallization (ATR) Study for Hybrid Orientation Technology (HOT) using Direct Silicon Bond (DSB) Substrates

The use of hybrid orientation technology (HOT) with direct silicon bond (DSB) wafers consisting of a (110) crystal orientation layer bonded to a bulk (100) handle wafer provides promising opportunities for easier migration of bulk CMOS designs to higher performance materials. In this work, the integration of shallow-trench-isolation (STI) after amorphization and templated recrystallization (ATR) scheme for converting surface orientation from (110) to (100) was investigated. By optimizing the trade-off between ATR-induced triangular morphology and DSB layer thickness, a 3X holes mobility improvement and 36% drive current gain were achieved for PMOSFETs fabricated on (110) plane using DSB-HOT. In addition, un-loaded ring oscillators fabricated using DSB substrates show a 38% improvement compared with control CMOS on (100) wafers.