Accurate Modeling and Characterization of Mobility in Tensile and Compressive Stress for State-of-the-Art Manufacturing NMOSFETS

Author

Wang, J.-S. ; Chen, William P N ; Shih, C.-H. ; Lien, C. ; Su, Pin ; Sheu, Yeuan-Ming ; Chao, Donald Y S ; Goto, K.

Author_Institution

Taiwan Semicond. Manuf. Co., Hsinchu

fYear

2007

fDate

23-25 April 2007

Firstpage

1

Lastpage

2

Abstract

A novel mobility model and its characterization technique were presented for manufacturing strained-Si NMOSFETs. The mobility terms in Matthiessen´s form can be precisely decoupled to investigate Coulomb scattering effect for different stress conditions. Stress devices suffered serious Coulomb scattering at high vertical field, however, tensile stress NMOSFET exhibits better mobility enhancement than compressive counterpart due to less Coulomb scattering.

Keywords

MOSFET; carrier mobility; compressive testing; elemental semiconductors; semiconductor device manufacture; semiconductor device models; semiconductor device testing; silicon; stress analysis; tensile testing; Coulomb scattering effect; Matthiessen´s form terms; Si; compressive stress; mobility characterization technique; mobility enhancement; mobility model; state-of-the-art strained-Si NMOSFET manufacturing; tensile stress; Compressive stress; Degradation; MOSFETs; Parasitic capacitance; Performance evaluation; Piezoresistance; Scattering; Semiconductor device manufacture; Tensile stress; Virtual manufacturing;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on

Conference_Location

Hsinchu

ISSN

1524-766X

Print_ISBN

1-4244-0584-X

Electronic_ISBN

1524-766X

Type

conf

DOI

10.1109/VTSA.2007.378964

Filename

4239532