An 1.2 V 8-bit 1-MS/s single-input res-cap segment SAR ADC for temperature sensor in LTE

Author

Wu, Haijun ; Li, Bin ; Zou, Minhan ; Huang, Weichao ; Wang, Yongping

Author_Institution

Sch. of Electron. & Inf. Eng., South China Univ. of Technol., Guangzhou, China

fYear

2011

fDate

17-18 Nov. 2011

Firstpage

1

Lastpage

2

Abstract

An 8-bit single-input successive approximation register (SAR) analog-to-digital converter (ADC) for long term evolution (LTE) system with an internal ring oscillator is implemented. A novel 5-bit resistor and 3-bit capacitor segment digital-to-analog converter (DAC) is used to minimize the chip area. The design was fabricated in a 0.13 μm CMOS process with an area of 0.1mm² and a power of 1.2 mW. The measurement results show that the DNL and INL of the proposed ADC are +0.11/-0.18 LSB and +0.8/-0.04 LSB respectively. The SFDR and SNDR can get 53 dB and 43.3 dB respectively.

Keywords

CMOS integrated circuits; Long Term Evolution; analogue-digital conversion; temperature sensors; CMOS process; LTE; internal ring oscillator; long term evolution system; power 1.2 mW; single-input res-cap segment SAR ADC; size 0.13 mum; successive approximation register analog-to-digital converter; temperature sensor; voltage 1.2 V; Arrays; CMOS process; Capacitors; Resistors; Ring oscillators; Semiconductor device measurement; Temperature sensors; LTE; SAR ADC; switched capacitor transceiver;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of

Conference_Location

Tianjin

ISSN

Pending

Print_ISBN

978-1-4577-1998-1

Electronic_ISBN

Pending

Type

conf

DOI

10.1109/EDSSC.2011.6117629

Filename

6117629