Optimization of the MuGFET performance on Super Critical-Strained SOI (SC-SSOI) substrates featuring raised source/drain and dual CESL

Author

Collaert, N. ; Rooyackers, R. ; Dilliway, G. ; Iyengar, V. ; Augendre, E. ; Leys, F. ; Cayrefourq, I. ; Ghyselen, B. ; Loo, R. ; Jurczak, M. ; Biesemans, S.

Author_Institution

IMEC, Leuven

fYear

2007

fDate

23-25 April 2007

Firstpage

1

Lastpage

2

Abstract

In this paper, we investigate for the first time the impact of raised source/drain on the short channel current enhancement of MuGFET devices on super critical strained SSOI (SC-SSOI). Short channel nMOS drive current can be improved up to 15% and even 50% in the case of high tensile 30 nm SSOI substrates. We also show that SC-SSOI has a higher sensitivity to the mobility boost from tensile contact etch stop layers (CESL). Therefore the combination of both mobility boosters is very beneficial for nMOS MuGFET when used with SEG.

Keywords

MOSFET; carrier mobility; silicon-on-insulator; Si-Jk; carrier mobility boosters; nMOS MuGFET devices; raised source-drain; short channel nmos drive current; super critical-strained SOI substrates; tensile contact etch stop layers; Charge carrier processes; Compressive stress; Electron mobility; Epitaxial growth; Etching; FinFETs; MOS devices; Substrates; Tensile strain; Tensile stress;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on

Conference_Location

Hsinchu

ISSN

1524-766X

Print_ISBN

1-4244-0584-X

Electronic_ISBN

1524-766X

Type

conf

DOI

10.1109/VTSA.2007.378972

Filename

4239540