• DocumentCode
    2849956
  • Title

    Design and performance of the GaAs FET

  • Author

    Bechtel, N. ; Hooper, W. ; Hower, P.

  • Author_Institution
    Fairchild Semiconductor, Palo Alto, CA, USA
  • Volume
    XIII
  • fYear
    1970
  • fDate
    18-20 Feb. 1970
  • Firstpage
    50
  • Lastpage
    51
  • Abstract
    A GaAs field-effect transistor that exhibits a unilateral gain of 17 dB at 2 GHz and an f_{\\max } of greater than 12 GHz has been developed. Device employs an epitaxial N-type channel deposited on a semi-insulating GaAs substrate with a Schottky barrier gate.
  • Keywords
    Circuits; Doping; Electron mobility; FETs; Frequency; Gallium arsenide; Geometry; Schottky barriers; Substrates; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1970 IEEE International
  • Conference_Location
    Philadelphia, PA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1970.1154856
  • Filename
    1154856
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2849956