A CMOS power amplifier using power combination for 3.5GHz mobile WiMAX subscriber applications

Author

Pan, Renjing ; Gu, Jiangmin ; Lim, Kok Meng ; Yeo, Kiat Seng ; Ma, Kaixue ; Wang, Keping

Author_Institution

Nanyang Technol. Univ., Singapore, Singapore

fYear

2011

fDate

17-18 Nov. 2011

Firstpage

1

Lastpage

2

Abstract

This paper presents the design and analysis of a RF CMOS power amplifier for 3.5GHz mobile WiMAX subscriber station applications. By using four-stage power combination technique at output stage, this new amplifier is able to deliver +32dBm power at input power of -2.7dBm. A PAE (power-added-efficiency) of 48.24% and 15.2% can be obtained at its P_O1dB (output 1dB compression point) and +25dBm output power, respectively. A saturated power of +33.5 dBm can be achieved. Powered by a 3.3 Volt DC supply, this proposed power amplifier offers a power gain of 35.8dB. The simulation results show that this design can be fully adopted in 3.5GHz mobile WiMAX subscriber applications. The presented power amplifier is based on Globalfoundries´ 0.18μm IC process.

Keywords

CMOS integrated circuits; WiMax; amplification; integrated circuits; mobile communication; power amplifiers; subscriber loops; IC process; RF CMOS power amplifier; four-stage power combination technique; frequency 3.5 GHz; gain 35.8 dB; mobile WiMAX subscriber station applications; power gain; power-added-efficiency; size 0.18 mum; voltage 3.3 V; CMOS integrated circuits; Mobile communication; Power amplifiers; Power generation; Simulation; WiMAX; CMOS; WiMAX; power amplifier; power combination;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of

Conference_Location

Tianjin

ISSN

Pending

Print_ISBN

978-1-4577-1998-1

Electronic_ISBN

Pending

Type

conf

DOI

10.1109/EDSSC.2011.6117643

Filename

6117643