Title :
A high-gain 15-W monolithic power amplifier with internal fault protection
Author_Institution :
Motorola Semoconductor Products Division, Phoenix, AZ, USA
Abstract :
A monolithic 15-W power amplifier featuring a high-frequency drift-lateral PNP, a new power NPN transistor, adjustable current limiting up to 3 A and thermal shutdown, will be described.
Keywords :
Circuit faults; Circuit stability; Gain; High power amplifiers; Power amplifiers; Power supplies; Preamplifiers; Protection; Technological innovation; Voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1970 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1970.1154860
