Investigation of size fluctuations in quantum wires by micro-luminescence

Author

Cingolani, R. ; Sogawa, F. ; Arakawa, Y. ; Rinaldi, R. ; DeVittorio, M. ; Passaseo, A.

Author_Institution

Inst. of Ind. Sci., Tokyo Univ., Japan

fYear

1998

fDate

11-15 May 1998

Firstpage

813

Lastpage

816

Abstract

Disorder and spectral broadening of vertically-stacked InGaAs/GaAs V-grooved quantum wires have been investigated by means of micro-probe luminescence. We show that the main spectral broadening mechanism originates from monolayer fluctuations at the bottom of the wire. A direct evidence of monolayer height islands of area 40^*40 nm formed at the bottom of the grooves is provided by atomic force microscopy. Lateral and vertical wire-to-wire fluctuations are found to be negligible on the micron-scale

Keywords

atomic force microscopy; gallium arsenide; indium compounds; photoluminescence; semiconductor quantum wires; size effect; spectral line broadening; 40 nm; InGaAs-GaAs; disorder; micro-luminescence; quantum wires; size fluctuations; spectral broadening; spectral broadening mechanism; vertically-stacked InGaAs/GaAs V-grooved quantum wires; wire-to-wire fluctuations; Atomic force microscopy; Electrons; Fluctuations; Gallium arsenide; Holographic optical components; Holography; Laser excitation; Luminescence; Spatial resolution; Wires;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1998 International Conference on

Conference_Location

Tsukuba

ISSN

1092-8669

Print_ISBN

0-7803-4220-8

Type

conf

DOI

10.1109/ICIPRM.1998.712791

Filename

712791