Studies on I-V performance enhancements of ZnO thin film transistors by vacuum treatments below 300°C

Author

Li, Yong-Qi ; Sun, Lei ; Liu, Xiao-Yan ; Wang, Yi ; Han, De-dong

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing, China

fYear

2011

fDate

17-18 Nov. 2011

Firstpage

1

Lastpage

2

Abstract

Bottom gate ZnO-TFTs are fabricated and the devices´ characteristics are reported. Before contact patterning, ZnO films were annealed in high vacuum environment under lower temperatures compared with in forming gas treatments. The characteristics of the ZnO-TFTs which have been annealed, especially at 300°C, have significant enhancement compared with those have not been annealed. The on/off current ratio is more than 10³ and the off current is less than 2×10^-8A at V_DS=40V.

Keywords

II-VI semiconductors; annealing; thin film transistors; wide band gap semiconductors; zinc compounds; I-V performance enhancements; ZnO; annealing; bottom gate TFT; contact patterning; forming gas treatments; thin film transistors; vacuum treatments; Annealing; Films; Logic gates; Scanning electron microscopy; Temperature; Thin film transistors; Zinc oxide; I-V Characteristics; RF magnetron sputtering; Thin Film Transistor; Vacuum Annealing; ZnO;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of

Conference_Location

Tianjin

ISSN

Pending

Print_ISBN

978-1-4577-1998-1

Electronic_ISBN

Pending

Type

conf

DOI

10.1109/EDSSC.2011.6117650

Filename

6117650