Title :
Maximizing the storage capacity of nonvolatile memories
Author :
Anxiao Jiang ; Hongchao Zhou ; Bruck, J.
Author_Institution :
Comput. Sci. & Eng. Dept., Texas A&M Univ., College Station, TX, USA
Abstract :
We propose variable-level cell, a new data representation scheme, for nonvolatile memories (including flash memories, phase-change memories, etc.). We derive its storage capacity, and analyze its performance on rewriting data.
Keywords :
random-access storage; data representation scheme; nonvolatile memory; rewriting data; storage capacity; variable-level cell; Ash; Capacity planning; Noise; Nonvolatile memory; Phase change materials; Programming; Writing;
Conference_Titel :
Information Theory and Applications Workshop (ITA), 2011
Conference_Location :
La Jolla, CA
Print_ISBN :
978-1-4577-0360-7
DOI :
10.1109/ITA.2011.5743584
