• DocumentCode
    2850233
  • Title

    Maximizing the storage capacity of nonvolatile memories

  • Author

    Anxiao Jiang ; Hongchao Zhou ; Bruck, J.

  • Author_Institution
    Comput. Sci. & Eng. Dept., Texas A&M Univ., College Station, TX, USA
  • fYear
    2011
  • fDate
    6-11 Feb. 2011
  • Firstpage
    1
  • Lastpage
    9
  • Abstract
    We propose variable-level cell, a new data representation scheme, for nonvolatile memories (including flash memories, phase-change memories, etc.). We derive its storage capacity, and analyze its performance on rewriting data.
  • Keywords
    random-access storage; data representation scheme; nonvolatile memory; rewriting data; storage capacity; variable-level cell; Ash; Capacity planning; Noise; Nonvolatile memory; Phase change materials; Programming; Writing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Information Theory and Applications Workshop (ITA), 2011
  • Conference_Location
    La Jolla, CA
  • Print_ISBN
    978-1-4577-0360-7
  • Type

    conf

  • DOI
    10.1109/ITA.2011.5743584
  • Filename
    5743584
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2850233