High output-power operation of 1.3 μm gain-coupled DFB laser with narrow spectral-linewidth

Author

Inaba, Yuichi ; Kito, Masahiro ; Ohya, Jun ; Ishino, Masato ; Matsui, Yasushi

Author_Institution

Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan

fYear

1998

fDate

11-15 May 1998

Firstpage

827

Lastpage

830

Abstract

High output-power and narrow spectral-linewidth operation of 1.3 μm gain-coupled distributed feedback (DFB) lasers with InAsP buried absorptive grating are reported. In this report, we have investigated the effect of the thickness of separate-confinement-heterostructure (SCH) layer on the spectral linewidth. As a result, it was clarified that decreasing the thickness of SCH layer is effective to reduce the spectral linewidth. For the fabricated laser, a record high output-power of 230 mW and a minimum spectral-linewidth of 100 kHz was realized

Keywords

distributed feedback lasers; semiconductor lasers; 1.3 μm gain-coupled DFB laser; 1.3 mum; 230 mW; gain-coupled distributed feedback laser; high output-power operation; narrow spectral-linewidth; separate-confinement-heterostructure; Distributed feedback devices; Epitaxial growth; Gratings; Laser feedback; Optical feedback; Optical films; Optical modulation; Power generation; Quantum well devices; Quantum well lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1998 International Conference on

Conference_Location

Tsukuba

ISSN

1092-8669

Print_ISBN

0-7803-4220-8

Type

conf

DOI

10.1109/ICIPRM.1998.712795

Filename

712795