Title :
All silicon multi chip module with a fully integrated cooling system
Author :
Pilchowski, J. ; Hölke, A. ; Henderson, H.T. ; Harms, T.M. ; Kazmierczak, M. ; Gerner, F.M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Cincinnati Univ., OH, USA
Abstract :
This paper proposes a novel silicon-on-silicon multichip module with an integrated thermal management system. Our module offers a new packaging approach, which allows great densification of the number of electronic circuits on a common substrate that is almost equivalent to wafer scale integration, yet uses discrete chips. Wet anisotropic etching is used for the separation of silicon integrated circuits as well as for the fabrication of the chip-receiving cavities in the MCM substrate. The etching exposes Si{111} planes in both chip and receiving surface, assuring a virtually perfect mating of the assemblage. The system is complemented with an integrated cooling channel which allows the removal of heat fluxes up to 300 Wcm-2
Keywords :
cooling; elemental semiconductors; etching; integrated circuit design; integrated circuit packaging; integrated circuit testing; multichip modules; silicon; MCM substrate; Si; Si{111} planes; all-silicon multichip module; chip surface planes; chip-receiving cavity fabrication; discrete chips; electronic circuit densification; etching; heat flux removal; integrated cooling channel; integrated cooling system; integrated thermal management system; packaging; receiving surface planes; silicon integrated circuit separation; silicon-on-silicon multichip module; wafer scale integration; wet anisotropic etching; Chip scale packaging; Electronic circuits; Electronic packaging thermal management; Electronics cooling; Integrated circuit packaging; Multichip modules; Silicon; Thermal management; Thermal management of electronics; Wafer scale integration;
Conference_Titel :
Multichip Modules and High Density Packaging, 1998. Proceedings. 1998 International Conference on
Conference_Location :
Denver, CO
Print_ISBN :
0-7803-4850-8
DOI :
10.1109/ICMCM.1998.670772