DocumentCode :
2850256
Title :
High performance laterally gain coupled InGaAs/AlGaAs DFB lasers
Author :
Kamp, M. ; Hofmann, J. ; Forchel, A. ; Schafer, F. ; Reithmaier, J.P.
Author_Institution :
Tech. Phys., Wurzburg Univ., Germany
fYear :
1998
fDate :
11-15 May 1998
Firstpage :
831
Lastpage :
834
Abstract :
We have investigated gain coupled lasers based on metal gratings patterned laterally to the laser ridge. For sufficiently small ridges, the evanescent field of the laser mode couples strongly to the grating. Ridge waveguide lasers were processed from an InGaAs/AlGaAs GRINSCH structure. The cw threshold currents are around 12 mA for a cavity with 800 μm length and 2.5 μm width. These values are comparable to reference lasers without metal grating, which shows that there is no significant penalty from loss coupling for a properly designed device. Pulsed monomode emission up to output power levels of 64 mW and sidemode supression ratios up to 45 dB have been obtained, indicating that the lateral coupling is strong enough for stable DFB operation
Keywords :
III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; indium compounds; quantum well lasers; waveguide lasers; 12 mA; 2.5 mum; 64 mW; 800 mum; InGaAs-AlGaAs; InGaAs/AlGaAs GRINSCH structure; cw threshold currents; gain coupled lasers; high performance laterally gain coupled InGaAs/AlGaAs DFB lasers; laser ridge; lateral coupling; metal gratings; Etching; Gratings; Indium gallium arsenide; Laser modes; Optical coupling; Optical device fabrication; Performance gain; Semiconductor lasers; Threshold current; Waveguide lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
ISSN :
1092-8669
Print_ISBN :
0-7803-4220-8
Type :
conf
DOI :
10.1109/ICIPRM.1998.712796
Filename :
712796
Link To Document :
بازگشت