Effect of a p-AlInAs electron stopper layer in 1.3 μm AlGaInAs/InP strained multiple quantum well lasers

Author

Takemasa, Keizo ; Munakata, Tsutomu ; Kobayashi, Masao ; Wada, Hiroshi ; Kamijoh, Takeshi

Author_Institution

Semicond. Technol. Lab., Oki Electr. Ind. Co. Ltd., Tokyo, Japan

fYear

1998

fDate

11-15 May 1998

Firstpage

835

Lastpage

838

Abstract

We have investigated the effect of a p-AlInAs electron stopper layer (ESL) in 1.3-μm AlGaInAs/InP strained multiple quantum well (MQW) lasers. The ESL was inserted between the MQW and p-side separate confinement heterostructure (SCH) layers to suppress the electron overflow from the MQW to p-SCH. The characteristic temperatures of the threshold currents and slope efficiencies were improved in the lasers with the stopper layers, especially at higher temperatures. As a result, a maximum CW operating temperature T_max was increased by 20°C, and T_max of 210 and 170°C under pulse and CW excitation was achieved, respectively

Keywords

III-V semiconductors; aluminium compounds; electron traps; gallium arsenide; indium compounds; quantum well lasers; 1.3 μm AlGaInAs/InP strained multiple quantum well lasers; 210 to 170 C; AlGaInAs-InP; AlInAs; electron overflow; p-AlInAs electron stopper layer; p-side separate confinement heterostructure; slope efficiencies; threshold currents; Ash; Doping; Electrons; Epitaxial growth; Indium phosphide; Optical device fabrication; Quantum well devices; Substrates; Temperature; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1998 International Conference on

Conference_Location

Tsukuba

ISSN

1092-8669

Print_ISBN

0-7803-4220-8

Type

conf

DOI

10.1109/ICIPRM.1998.712797

Filename

712797