DocumentCode
2850286
Title
Low driving current 1.3-μm beam-expander integrated laser diode with n-type modulation doped multiple quantum wells
Author
Sato, H. ; Komori, M. ; Taike, A. ; Tsuchiya, T. ; Aoki, M. ; Takahashi, M. ; Uomi, K.
Author_Institution
Central Res. Labs., Hitachi Ltd., Tokyo, Japan
fYear
1998
fDate
11-15 May 1998
Firstpage
839
Lastpage
842
Abstract
The driving current of a 1.3-μm beam-expander (BEX) integrated laser diode was dramatically reduced by using n-type modulation doped multiple-quantum-well active layer. The threshold current at 85°C was 28.0 mA and the slope efficiency was 0.3 W/A. In a temperature range from -30°C to 85°C, a record high characteristic temperature T 0 of 86. 1 K and the slope efficiency degradation Δη as low as (-30°C-85°C)-1.6 dB were achieved
Keywords
optical modulation; quantum well lasers; 1.3 mum; 28.0 mA; 85 C; 86.1 K; characteristic temperature; low driving current 1.3-μm beam-expander integrated laser diode; n-type modulation doped multiple quantum wells; slope efficiency; threshold current; Degradation; Diode lasers; Epitaxial layers; Optical coupling; Optical devices; Optical fiber networks; Optical fibers; Quantum well devices; Temperature distribution; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location
Tsukuba
ISSN
1092-8669
Print_ISBN
0-7803-4220-8
Type
conf
DOI
10.1109/ICIPRM.1998.712798
Filename
712798
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