Effects of fluorine incorporation on the electrical properties of silicon MOS capacitor with La2O3 gate dielectric

Author

Qian, L.X. ; Huang, X.D. ; Lai, P.T.

Author_Institution

Dept. of Electr. & Electron. Eng., Univ. of Hong Kong, Hong Kong, China

fYear

2011

fDate

17-18 Nov. 2011

Firstpage

1

Lastpage

2

Abstract

In this work, the effects of fluorine incorporation by using plasma on the electrical properties of Si MOS capacitor with La₂O₃ gate dielectric are investigated. From the capacitance-voltage (C-V) curve and gate leakage current, it is demonstrated that the F-plasma treatment can effectively suppress the growth of interfacial layer, and thus improve the electrical properties of the device in terms of accumulation capacitance, interface-state density and breakdown voltage.

Keywords

MOS capacitors; fluorine; lanthanum compounds; leakage currents; plasma materials processing; silicon; F-plasma treatment; La₂O₃; La₂O₃ gate dielectric; accumulation capacitance; breakdown voltage; capacitance-voltage curve; electrical properties; fluorine; gate leakage current; interface-state density; interfacial layer; silicon MOS capacitor; Annealing; Capacitance-voltage characteristics; Dielectrics; Leakage current; Logic gates; Silicon; Substrates; MOS; fluorine; high-k dielectric; interfacial layer; lanthanum oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of

Conference_Location

Tianjin

ISSN

Pending

Print_ISBN

978-1-4577-1998-1

Electronic_ISBN

Pending

Type

conf

DOI

10.1109/EDSSC.2011.6117657

Filename

6117657