Title :
Silicon avalanche diodes as oscillators and power amplifiers in S-band
Author :
Assour, J. ; D´Aiello, R.
Author_Institution :
RCA Laboratories, Princeton, NJ, USA
Abstract :
Abrupt-and linearly-graded junction silicon diodes have been investigated in the high-efficiency mode. S-band and C-band oscillators produced peak powers of 60 W and efficiencies of 16.5%: S-band amplifiers yielded 19-dB gain and 2-W output.
Keywords :
Circuit optimization; Diodes; Frequency; High power amplifiers; Laboratories; Oscillators; Power amplifiers; Silicon; Tuning; Voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1970 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1970.1154880
