Title :
a DC-DC boost converter based on SiC MOSFET and SiC SBD
Author :
Chao, Zhang ; Xiao-Yan, Tang ; Yu-Ming, Zhang ; Wen, Wang ; Yi-Men, Zhang
Author_Institution :
Key Lab. of Wide Bandgap Semicond. Technol., Xidian Univ., Xi´´an, China
Abstract :
Power devices based upon silicon technology are rapidly approaching their theoretical limits of performance. Consequently, it will be necessary to develop devices from other materials in the future in order to reduce power losses in high frequency systems and in order to achieve high efficiencies. This paper presents a DC-DC boost converter based on SiC MOSFET and SiC Schottky Barrier Diode(SBD). This study focuses on demonstrating the capability of a DC/DC boost converter based on SiC devices in the applications at high switch frequency and high temperature operation. The simulation of the DC-DC boost converter is performed with the ISE-TCAD. The simulation results show that a switching frequency of 20 kHz, an output voltage of 500V and the output voltage ripples of 1%. In the steady state of the 20 kHz DC-DC boost converter simulation, the input power is 1248W, the output power is 1200W and the efficiency is as high as 96.1%.
Keywords :
DC-DC power convertors; MOSFET; Schottky diodes; silicon compounds; wide band gap semiconductors; DC-DC boost converter; ISE-TCAD performance; MOSFET; SBD; Schottky barrier diode; SiC; frequency 20 kHz; power 1200 W; power 1248 W; power device; power loss reduction; voltage 500 V; Leakage current; Power MOSFET; Silicon; Silicon carbide; Transient analysis; DC-DCboost converter; MOSFET; Schottky Barrier Diode(SBD); Silicon Carbide(SiC);
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of
Conference_Location :
Tianjin
Print_ISBN :
978-1-4577-1998-1
Electronic_ISBN :
Pending
DOI :
10.1109/EDSSC.2011.6117660
