A low voltage 8.4 ppm/°C voltage reference based on subthreshold MOSFETs

Author

Zheng, Lixia ; Wu, Jin ; Zhao, Xia

Author_Institution

Southeast Univ., Wuxi, China

fYear

2011

fDate

17-18 Nov. 2011

Firstpage

1

Lastpage

2

Abstract

A CMOS voltage reference based on subthreshold operation is proposed. The current mirror mismatch error resulting from the channel length modulation effect is improved by using a self-cascode operational amplifer. The reference generates a constant reference voltage of 639 mV at supply voltage of 1.2 V with power consumption of 18 uW at room temperature fabricated in CSMC 0.18 um CMOS technology. It achieves a temperature coefficient of 8.4 ppm/°C for the temperature range from -20 °C to 120 °C

Keywords

CMOS integrated circuits; MOSFET; operational amplifiers; reference circuits; CMOS voltage reference; CSMC CMOS technology; channel length modulation effect; mirror mismatch error; power 18 muW; power consumption; self-cascode operational amplifer; size 0.18 mum; subthreshold MOSFET; temperature -20 degC to 120 degC; temperature 293 K to 298 K; voltage 1.2 V; voltage 639 mV; CMOS integrated circuits; Capacitance; MOSFETs; Mirrors; Operational amplifiers; Threshold voltage; operational amplifier; self-cascode; subthreshold; voltage reference;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of

Conference_Location

Tianjin

ISSN

Pending

Print_ISBN

978-1-4577-1998-1

Electronic_ISBN

Pending

Type

conf

DOI

10.1109/EDSSC.2011.6117666

Filename

6117666