A novel compact isolated structure for 600V Gate Drive IC

Author

Zhu, Jing ; Qian, Qinsong ; Sun, Weifeng ; Lu, Shengli ; Lin, Yanzhang

Author_Institution

Nat. ASIC Syst. Eng. Res. Center, Southeast Univ., Nanjing, China

fYear

2011

fDate

17-18 Nov. 2011

Firstpage

1

Lastpage

2

Abstract

A novel compact isolation structure for high voltage Gate Drive IC is proposed in this paper. As compared with the conventional isolation structure, the proposed structure can achieve the same breakdown capacity with smaller area by adding N-well islands into P-well region which located between LDMOS (Lateral double diffused MOS) and HVJT (high voltage junction termination) region. Moreover, there is no punch through risk in the region between LDMOS and High-side in proposed structure. Finally, a 600V isolation structure is realized with its drift length is only 49μm.

Keywords

MOSFET; driver circuits; isolation technology; semiconductor device breakdown; semiconductor junctions; HVJT; LDMOS; N-well islands; P-well region; breakdown capacity; compact isolated structure; drift length; high voltage gate drive IC; high voltage junction termination region; isolation structure; lateral double diffused MOS; punch through risk; size 49 mum; voltage 600 V; Breakdown voltage; Electric breakdown; Electric potential; Electrostatics; Integrated circuit modeling; Logic gates; 3D TACD Simulation; Compact Gate Driver IC; Divided RESURF;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of

Conference_Location

Tianjin

ISSN

Pending

Print_ISBN

978-1-4577-1998-1

Electronic_ISBN

Pending

Type

conf

DOI

10.1109/EDSSC.2011.6117671

Filename

6117671