Title :
A novel compact isolated structure for 600V Gate Drive IC
Author :
Zhu, Jing ; Qian, Qinsong ; Sun, Weifeng ; Lu, Shengli ; Lin, Yanzhang
Author_Institution :
Nat. ASIC Syst. Eng. Res. Center, Southeast Univ., Nanjing, China
Abstract :
A novel compact isolation structure for high voltage Gate Drive IC is proposed in this paper. As compared with the conventional isolation structure, the proposed structure can achieve the same breakdown capacity with smaller area by adding N-well islands into P-well region which located between LDMOS (Lateral double diffused MOS) and HVJT (high voltage junction termination) region. Moreover, there is no punch through risk in the region between LDMOS and High-side in proposed structure. Finally, a 600V isolation structure is realized with its drift length is only 49μm.
Keywords :
MOSFET; driver circuits; isolation technology; semiconductor device breakdown; semiconductor junctions; HVJT; LDMOS; N-well islands; P-well region; breakdown capacity; compact isolated structure; drift length; high voltage gate drive IC; high voltage junction termination region; isolation structure; lateral double diffused MOS; punch through risk; size 49 mum; voltage 600 V; Breakdown voltage; Electric breakdown; Electric potential; Electrostatics; Integrated circuit modeling; Logic gates; 3D TACD Simulation; Compact Gate Driver IC; Divided RESURF;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of
Conference_Location :
Tianjin
Print_ISBN :
978-1-4577-1998-1
Electronic_ISBN :
Pending
DOI :
10.1109/EDSSC.2011.6117671
