A new type of 4H-SiC epitaxial channel IEMOSFET

Author

Tang, Xiaoyan ; Zhang, Chao ; Zhang, Yuming ; Zhang, Yimen ; Yang, Fei

Author_Institution

Key Lab. of Wide Band-Gap Semicond., Mater. & Devices, Xidian Univ., Xi´´an, China

fYear

2011

fDate

17-18 Nov. 2011

Firstpage

1

Lastpage

2

Abstract

A new type of n-channel 4H-SiC IEMOSFET is proposed in which channel film on top of the p-well is formed by the third epitaxial growth. In the epitaxial Channel IEMOSFET, the surface roughness induced by implantation and activation annealing processes is avoided. The epitaxial channel and the implanted channel IEMOSFET are compared via simulations using 2-D simulator ISE. The simulated results indicate that the new IEMOSFET offers reduction of specific on-resistance as well as maintaining a high VBR.

Keywords

MOSFET; annealing; epitaxial growth; surface roughness; 2D simulator ISE; SiC; VBR; activation annealing process; channel film; epitaxial channel IEMOSFET; epitaxial growth; implantation; n-channel 4H-SiC IEMOSFET; p-well; surface roughness; Epitaxial growth; JFETs; Logic gates; MOSFET circuits; Rough surfaces; Surface roughness; Surface treatment; IEMOSFET; Silicon Carbide; channel mobility; epitaxial;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of

Conference_Location

Tianjin

ISSN

Pending

Print_ISBN

978-1-4577-1998-1

Electronic_ISBN

Pending

Type

conf

DOI

10.1109/EDSSC.2011.6117677

Filename

6117677