Crystallization study for MgO in magnetic tunnel junction structure

Author

Lou, Yong-Le ; Zhang, Yu-Ming ; Xu, Da-Qing ; Guo, Hui ; Zhang, Yi-Men ; Jia, Ren-Xu ; Zhao, Yang

Author_Institution

Key Lab. of Wide Band-Gap Semicond., Xidian Univ., Xi´´an, China

fYear

2011

fDate

17-18 Nov. 2011

Firstpage

1

Lastpage

2

Abstract

The growth and crystallization processes of Co₂₀Fe₅₀B₃₀/MgO/Co₂₀Fe₅₀B₃₀ magnetic tunnel junction structures is investigated with 2θ x-ray diffraction. A MgO layer with thickness of 1.5nm was grown on an amorphous CoFeB layer, and then was crystallized. By proper annealing, the crystal structure of MgO has been improved. The results show important information for preparation of magnetic tunnel junction.

Keywords

X-ray diffraction; annealing; boron; cobalt; crystal structure; crystallisation; iron; magnesium; magnetic tunnelling; Co₂₀Fe₅₀B₃₀-MgO-Co₂₀Fe₅₀B₃₀; MgO; MgO layer; X-ray diffraction; amorphous CoFeB layer; annealing; crystal structure; crystallization; magnetic tunnel junction structure; Annealing; Crystallization; Diffraction; Junctions; Magnetic tunneling; Sputtering; MgO layer thickness; XRD; crystallize; magnetic tunnel junction;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of

Conference_Location

Tianjin

ISSN

Pending

Print_ISBN

978-1-4577-1998-1

Electronic_ISBN

Pending

Type

conf

DOI

10.1109/EDSSC.2011.6117679

Filename

6117679