Title :
Crystallization study for MgO in magnetic tunnel junction structure
Author :
Lou, Yong-Le ; Zhang, Yu-Ming ; Xu, Da-Qing ; Guo, Hui ; Zhang, Yi-Men ; Jia, Ren-Xu ; Zhao, Yang
Author_Institution :
Key Lab. of Wide Band-Gap Semicond., Xidian Univ., Xi´´an, China
Abstract :
The growth and crystallization processes of Co20Fe50B30/MgO/Co20Fe50B30 magnetic tunnel junction structures is investigated with 2θ x-ray diffraction. A MgO layer with thickness of 1.5nm was grown on an amorphous CoFeB layer, and then was crystallized. By proper annealing, the crystal structure of MgO has been improved. The results show important information for preparation of magnetic tunnel junction.
Keywords :
X-ray diffraction; annealing; boron; cobalt; crystal structure; crystallisation; iron; magnesium; magnetic tunnelling; Co20Fe50B30-MgO-Co20Fe50B30; MgO; MgO layer; X-ray diffraction; amorphous CoFeB layer; annealing; crystal structure; crystallization; magnetic tunnel junction structure; Annealing; Crystallization; Diffraction; Junctions; Magnetic tunneling; Sputtering; MgO layer thickness; XRD; crystallize; magnetic tunnel junction;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of
Conference_Location :
Tianjin
Print_ISBN :
978-1-4577-1998-1
Electronic_ISBN :
Pending
DOI :
10.1109/EDSSC.2011.6117679
