Title :
Calculations of electrical characteristics of resonant tunneling structures
Author :
Dragunov, V.P. ; Boldyrev, D.V.
Author_Institution :
Novosibirsk State Tech. Univ., Russia
Abstract :
Since Tsu and Esaki (1973) first proposed the resonant tunneling diode (RTD), RTDs have been widely investigated both, theoretically and experimentally, because of their physical properties and potential for high-speed device applications. Resonant tunneling is a strictly quantum phenomenon in which charged carriers tunnel between the two electrodes of a double-barrier heterostructure through the quantized quasibound state of a potential well. In this report, we have performed numerical calculations of the current-voltage characteristics for the case of a GaAs-AlAs RTD under hydrostatic pressure. Our calculation is based on the envelope-function approximation
Keywords :
III-V semiconductors; Poisson equation; Schrodinger equation; aluminium compounds; gallium arsenide; quantum well devices; resonant tunnelling diodes; semiconductor device models; GaAs-AlAs; Poisson equation; Schrodinger equation; current-voltage characteristics; double-barrier heterostructure; electron space charge; energy band profiles; envelope-function approximation; hydrostatic pressure; model; potential well; quantized quasibound state; quantum well; resonant tunneling diode; resonant tunneling structures; transfer matrix formalism; Boundary conditions; Diodes; Electric variables; Electrodes; Electrons; Gallium arsenide; Poisson equations; Quantum wells; Resonant tunneling devices; Space charge;
Conference_Titel :
Electronic Instrument Engineering Proceedings, 1998. APEIE-98. Volume 1. 4th International Conference on Actual Problems of
Conference_Location :
Novosibirsk
Print_ISBN :
0-7803-4938-5
DOI :
10.1109/APEIE.1998.769011
