Title :
Effect of ICP etching on InP-based multiple quantum wells microring lasers
Author :
Sheng, Xie ; Zhiming, Chen ; Xin, Yu ; Shilin, Zhang ; Xianjie, Li ; Yan, Chen ; Weilian, Guo ; Lifang, Qi ; Luhong, Mao ; Jinlong, Yu
Author_Institution :
Sch. of Electron. Inf. Eng., Tianjin Univ., Tianjin, China
Abstract :
Dry etching of InP-based epitaxial structure was performed by using inductively coupled plasma (ICP) system with different chemistries. The surface topographies shown that the waveguide profiles etched using the Cl2/CH4/Ar recipe have better surface and sidewall quality than that of the Cl2/BCl3 chemistry. To verify the practical influence of ICP etching, InP/AlGaInAs multiple quantum wells microring lasers were fabricated, and the electrical and optical properties were compared. The experimental results revealed that the Cl2/CH4/Ar recipe is preferable to the fabrication of InP-based optoelectronic devices in our experimental system.
Keywords :
III-V semiconductors; aluminium compounds; carbon compounds; gallium compounds; indium compounds; quantum well lasers; ring lasers; sputter etching; surface topography; Cl2-BCl3; Cl2-CH4-Ar; InP-AlGaInAs; dry etching; epitaxial structure; inductively coupled plasma etching; multiple quantum wells microring lasers; optoelectronic devices; surface topography; waveguide profiles; Argon; Chemistry; Etching; Integrated optics; Optical device fabrication; Optical surface waves; Optical waveguides; Dry etching; indium phosphide; inductively coupled plasma; microring laser; waveguide;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of
Conference_Location :
Tianjin
Print_ISBN :
978-1-4577-1998-1
Electronic_ISBN :
Pending
DOI :
10.1109/EDSSC.2011.6117681
